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The DTA123EETL is a PNP digital transistor manufactured by ROHM Semiconductor, featuring built-in bias resistors to simplify circuit design. It operates with a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. The device includes an internal resistor ratio of 1:1, with typical base resistance (R1) and emitter-base resistance (R2) values of 2.2 kOhms each. Key electrical parameters include a minimum DC current gain (hFE) of 20 at -20 mA and -5 V, a transition frequency of 250 MHz, and a power dissipation rating of 150 mW. It is housed in the EMT3 (SOT-416) surface-mount package.
Verify the specific suffix 'EETL' corresponds to the EMT3/SOT-416 package and 2.2kOhm resistor values. Confirm RoHS compliance status and ensure the ordering quantity matches the manufacturer's standard reel size of 3,000 units. Cross-reference the datasheet for storage temperature ranges and moisture sensitivity levels before integration.
Select this component when a compact PNP solution with integrated biasing is required for low-power switching. Ensure the 50V collector-emitter voltage rating exceeds the application's peak voltage. Verify that the 150 mW power dissipation limit accommodates the thermal conditions of the target PCB layout.
This part belongs to the DTA123 series of digital transistors from ROHM Semiconductor. The series offers various resistor ratios and packages. The DTA123EETL specifically denotes the PNP type with 2.2kOhm resistors in the EMT3 package, distinguishing it from variants like DTA123EEB or DTA123EM which may differ in packaging or resistor values.
Direct pin-compatible substitutes within the same family include DTA123EEB (UMT3F package) and DTA123EM (VMT3 package). Verify that the alternative package dimensions and thermal characteristics match the existing footprint and board constraints.