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The DTA123EM3T5G is a PNP Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of a series base resistor and a base-emitter resistor. It operates with a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. The device features a typical input resistance R1 of 2.2 kOhms and an emitter-base resistance R2 of 2.2 kOhms, yielding a resistor ratio of 1.0. Packaged in SOT-723, it supports a junction temperature range of -55 to +150 °C and offers a total device dissipation of 260 mW at 25°C.
Verify the specific ordering suffix T5G corresponds to the 8000-unit tape and reel shipping configuration. Confirm that the Pb-Free package marking aligns with the required documentation standards. Ensure compliance with RoHS directives as specified in the manufacturer's ordering information table before finalizing procurement orders.
Select this component when a compact PNP switching solution with integrated biasing is required. Verify that the 50 Vdc voltage rating and 100 mA current capacity meet the load requirements. Consider the SOT-723 package dimensions for PCB layout constraints and ensure thermal dissipation limits are respected under operating conditions.
This part belongs to the DTA123E/D digital transistor family, which includes variants like MUN2131 and DTA123EE. These devices share the core function of replacing single transistors with external resistor networks. The EM3 variant specifically denotes the SOT-723 package option within this broader product line.
Direct substitutes include other PNP BRTs with similar electrical characteristics and pinouts, such as the DTA123EE or compatible parts from other manufacturers. Verify that any replacement maintains the 2.2 kOhm resistor values and fits within the available board space constraints.