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The DTA123EU3HZGT106 is a PNP digital transistor manufactured by ROHM Semiconductor, designed for surface-mount applications in the UMT3 (SOT-323) package. It integrates bias resistors with typical values of R1 = 2.2 kΩ and R2 = 2.2 kΩ to simplify circuit design. Key electrical specifications include a collector-emitter voltage (VCEO) of -50 V, a continuous collector current (IC) of -100 mA, and a maximum power dissipation (PD) of 200 mW. The device features a transition frequency (fT) of 250 MHz and a minimum DC current gain (hFE) of 20 at IC = -10 mA and VCE = -5 V. It meets AEC-Q101 automotive grade standards.
Verify the specific suffix GT106 against official ROHM documentation to confirm tape-and-reel packaging quantities and marking codes. Ensure compatibility with RoHS3 directives if required by the target application. Cross-reference datasheet revisions to confirm active status, as some variants in the DTA123 series may be marked obsolete or not recommended for new designs.
Select this component when a PNP digital transistor with integrated 2.2 kΩ bias resistors is required in a SOT-323 package. Confirm that the -50 V collector-emitter voltage and -100 mA current ratings align with the load requirements. Verify that the 200 mW power dissipation capability is sufficient for the thermal environment. Consider complementary NPN types like DTC123EU3HZG if symmetrical PNP/NPN pairs are needed.
This part belongs to the ROHM DTA123 series of pre-biased PNP transistors. It shares core electrical characteristics with variants such as DTA123YU3T106 and DTA123EUAT106, differing primarily in packaging suffixes and manufacturing lot codes. The EU3 designation typically indicates the UMT3/SOT-323 package form factor used in compact consumer and automotive electronics.
DTA123YU3T106: Similar PNP digital transistor in UMT3 package with identical electrical ratings and integrated 2.2 kΩ resistors. DTC123EU3HZG: Complementary NPN version of the same series, offering similar performance for paired applications.