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The DTA123JCAT116 is a PNP bias resistor built-in transistor manufactured by ROHM Semiconductor. It integrates a single PNP transistor with internal bias resistors in an SOT-23-3 surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of -50 V, a continuous collector current of -100 mA, and a power dissipation rating of 350 mW. The typical input resistance (R1) is 2.2 kOhms, with a typical resistor ratio of 21. The device features a minimum DC current gain (hfe) of 80 at -10 mA and -5 V, and supports a maximum operating frequency of 250 MHz. It is qualified under AEC-Q101 standards for automotive applications.
Verify the specific suffix CAHZGT116 against standard CAAT116 variants if leak absorption is required. Confirm AEC-Q101 qualification status for automotive designs. Check RoHS compliance details on the official datasheet. Ensure SOT-23-3 footprint compatibility during PCB layout. Validate supply chain authenticity through authorized ROHM distributors.
Select this component when a PNP digital transistor with 2.2 kOhm input resistance is needed. Compare hfe values against other DTA123 variants like DTA123TCA or DTA123ECA based on gain requirements. Consider the -50 V VCEO limit for voltage headroom. Evaluate thermal performance within the 350 mW dissipation constraint. Verify package size constraints against available SOT-23-3 land patterns.
This part belongs to the ROHM DTx series of bias resistor built-in transistors. It shares the SOT-23-3 package form factor with other DTA123 variants but differs in internal resistor ratios and gain characteristics. The series is designed to replace discrete resistor-transistor combinations, reducing board space and assembly complexity.
DTA123TCA offers similar functionality with different gain specifications. DTA123ECA provides alternative resistor ratios. Verify pinout compatibility and electrical parameter overlaps before substitution.