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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A EMT3F
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-89, SOT-490
- Supplier Device Package：EMT3F (SOT-416FL)
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Overview
The DTA123JEBTL is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-416 (SC-89) surface-mount package. It integrates bias resistors with a typical input resistance of 2.2 kOhms and a resistor ratio of 21. The device supports a maximum collector current of 100 mA and operates up to a frequency of 250 MHz. Key electrical limits include a collector-emitter voltage of 50 V, power dissipation of 150 mW, and a minimum DC current gain of 80 at 10 mA. It functions as a pre-biased transistor for simplified circuit design.
Feature Summary
- Integrates built-in bias resistors to eliminate the need for external input components.
- Enables straightforward configuration of inverter circuits by setting only on/off conditions.
- Provides independent transistor elements within a compact surface-mount footprint.
Applications
- Inverter circuits
- Interface logic
- Driver applications
Procurement Notes
Verify the specific suffix against official ROHM documentation to confirm pinout and electrical characteristics, as variations exist within the family. Confirm RoHS compliance status directly from the manufacturer's datasheet before integration. Ensure the ordering quantity aligns with standard reel packaging requirements specified in the product specification.
Selection Notes
Select this component when a single NPN digital transistor with a 2.2 kOhm base resistor is required. Compare the 50 V collector-emitter rating against system voltage peaks. Verify that the 150 mW power dissipation capability meets thermal constraints. Consider complementary PNP variants if push-pull configurations are necessary for the application.
Part Context
This part belongs to the DTA123 series of bias resistor built-in transistors. It shares functional similarities with other models like DTA123JE but differs in internal resistor ratios and package types. The SOT-416 package offers a small form factor suitable for high-density PCB layouts compared to larger through-hole alternatives.
Replacement Considerations
Publicly confirmed substitute part numbers for this specific variant are not available in the provided source data. Cross-referencing requires matching the NPN polarity, 2.2 kOhm input resistance, and SOT-416 package dimensions.
