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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A SC75
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Bulk
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SC-75, SOT-416
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Overview
The DTA123JET1 is a PNP Bias Resistor Transistor (BRT) from the DTA114EET1 series, manufactured by ON Semiconductor. It integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor (R1) and a base-emitter resistor (R2). The device features an R1 value of 2.2 kΩ and an R2 value of 47 kΩ. It is housed in the SC-75/SOT-416 package designed for low power surface mount applications. Key electrical ratings include a collector-emitter voltage (VCEO) of 50 Vdc and a collector current (IC) of 100 mAdc at 25°C.
Feature Summary
- Integrates a single transistor with a monolithic bias network to replace individual components.
- Simplifies circuit design by eliminating external resistor bias networks.
- Reduces board space and component count in electronic systems.
- SC-75/SOT-416 package supports wave or reflow soldering with modified gull-winged leads.
Applications
- Inverter circuits
- Interface logic
- Driver applications
Procurement Notes
Verify the specific ordering suffix to confirm package type and shipping configuration. Confirm RoHS compliance status if required for the assembly process. Check the latest datasheet revision for any updates to maximum ratings or thermal characteristics before finalizing procurement specifications.
Selection Notes
Select this component when a PNP digital transistor with a 2.2 kΩ base resistor and 47 kΩ emitter-base resistor is required. Ensure the application operates within the 50 V collector-emitter voltage limit and 100 mA collector current rating. Consider the SC-75 package dimensions for PCB layout constraints.
Part Context
This part belongs to the DTA114EET1 Series of PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Networks. The series is designed to simplify circuit design by integrating bias resistors directly into the transistor package, reducing both system cost and board space compared to discrete solutions.
Replacement Considerations
DTA123EET1
FAQ
What are the internal resistor values for the DTA123JET1?
The DTA123JET1 has a series base resistor (R1) of 2.2 kΩ and a base-emitter resistor (R2) of 47 kΩ.
What is the maximum collector-emitter voltage for this device?
The maximum collector-emitter voltage (VCEO) is 50 Vdc.
Which package style does the DTA123JET1 use?
It uses the SC-75 (also known as SOT-416) package, which is suitable for low power surface mount applications.
