DTA123JET1G

$0.15

Description：TRANS PREBIAS PNP 50V 0.1A SC75
Series：-

SKU:a782b8da70e2 Category: Single, Pre-Biased Bipolar Transistors Brand: onsemi

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Product introduction

Product Detailed Parameters

Description：TRANS PREBIAS PNP 50V 0.1A SC75
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Cut Tape (CT)
Resistors Included：R1 and R2
Transistor Type：PNP - Pre-Biased
Current - Collector (Ic) (Max)：100 mA
Voltage - Collector Emitter Breakdown (Max)：50 V
Resistor - Base (R1)：2.2 kOhms
Resistor - Emitter Base (R2)：47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)：500nA
Frequency - Transition：-
Power - Max：200 mW
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：SC-75, SOT-416
Supplier Device Package：SC-75, SOT-416

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DTA123JET1G

Overview

The DTA123JET1G is a single NPN digital transistor manufactured by onsemi, featuring built-in bias resistors to simplify circuit design. It operates with a maximum collector-emitter voltage of 50 V and supports a continuous collector current of 100 mA. The device utilizes an EMT3 (SOT-416) surface-mount package for compact integration. Key electrical specifications include a typical input resistance of 2.2 kΩ and a minimum DC current gain (hFE) ranging from 80 to 150. Power dissipation is rated at 150 mW, with an operating temperature range spanning from -55°C to +150°C.

Feature Summary

Integrates bias resistors to enable inverter configuration without external components
Provides high current switching capability suitable for logic interface applications
Designed for surface-mount assembly in compact electronic systems

Applications

Logic level shifting between different voltage domains
Inverter circuits in digital control systems
Switching applications in consumer electronics

Procurement Notes

Verify the specific suffix 'T1G' against official manufacturer documentation to confirm tape-and-reel packaging quantities and compliance status. Ensure the selected variant matches the required EMT3 package dimensions and thermal characteristics for the target application environment.

Selection Notes

Select this component when a compact NPN switch with integrated base drive is required. The built-in resistor network reduces board space and component count compared to discrete transistor solutions. Verify that the 50 V rating and 100 mA current capacity align with the load requirements of the intended circuit design.

Part Context

This part belongs to onsemi's family of bias resistor built-in transistors (BRTs). These devices combine a single transistor with internal resistors to provide simplified switching functionality. The DTA123JE series specifically offers NPN polarity with defined resistance ratios for consistent performance across various digital logic applications.