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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A EMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：250 MHz
- Power - Max：150 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：EMT3
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Overview
The DTA123JETL is a PNP pre-biased digital transistor manufactured by Rohm Semiconductor, designed for surface-mount applications in the EMT3 package (SC-75/SOT-416). It integrates internal bias resistors to simplify circuit design. Key electrical parameters include a maximum collector current of 100 mA and a collector-emitter breakdown voltage of 50 V. The device features a transition frequency of 250 MHz and a maximum power dissipation of 150 mW. Internal resistor values are specified as R1 = 2.2 kOhms and R2 = 47 kOhms. DC current gain is guaranteed at a minimum of 80 at 10 mA and 5 V, with a maximum saturation voltage of 300 mV under specific test conditions.
Feature Summary
- Integrates built-in bias resistors to eliminate external input resistance requirements for inverter circuits.
- Provides simplified circuit configuration by allowing operation through setting only switch conditions.
- Utilizes a compact surface-mount EMT3 package suitable for space-constrained designs.
Applications
- Inverter circuits
- Interface drivers
- General switching applications
Procurement Notes
Verify the component status before procurement, as availability may vary. Confirm that the EMT3 package dimensions align with the target PCB footprint. Ensure the 50 V rating and 100 mA current capacity meet the specific circuit requirements. Check for any obsolescence notices or recommended new design alternatives from the manufacturer.
Selection Notes
Select this component when a PNP digital transistor with integrated biasing is required for low-power switching. The 2.2 kOhm input resistor value suits standard logic interface levels. Consider the 150 mW power dissipation limit during thermal analysis. Verify compatibility with the SC-75/SOT-416 footprint if replacing existing designs.
Part Context
This part belongs to the DTA123 series of PNP digital transistors from Rohm Semiconductor. The series offers various resistor combinations and packages. The DTA123JETL specifically uses the EMT3 package and includes 2.2 kOhm and 47 kOhm internal resistors. It is distinct from other variants like the DTA123JUBHZGTL which uses a UMT3F package.
Replacement Considerations
- DTA123JE
FAQ
What are the internal resistor values for the DTA123JETL?
The internal resistors are R1 = 2.2 kOhms and R2 = 47 kOhms.
What is the maximum collector-emitter voltage for this device?
The maximum collector-emitter breakdown voltage is 50 V.
Is the DTA123JETL suitable for automotive applications?
The provided documentation does not explicitly state AEC-Q101 certification for this specific part number, unlike some other variants in the series.
