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DTA123JMT2L is a single PNP digital transistor manufactured by ROHM Semiconductor, housed in a VMT3 (SOT-723) surface-mount package. It integrates bias resistors with R1 at 2.2 kOhms and R2 at 47 kOhms. The device supports a collector-emitter voltage of -50 V and continuous collector current of -100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 80 at -10 mA/-5 V, a transition frequency of 250 MHz, and power dissipation of 150 mW. Operating temperature ranges from -55°C to +150°C.
Verify the specific suffix 'T2L' against the manufacturer's latest datasheet to confirm tape-and-reel packaging specifications and marking codes. Ensure compatibility with automated pick-and-place equipment regarding the VMT3 package dimensions. Cross-reference RoHS compliance status with current regulatory requirements before finalizing procurement orders.
Select this component when a PNP configuration with a 2.2k/47k resistor ratio is required. Compare hFE minimums and VCEO ratings against alternative packages like SOT-23 if higher power dissipation or different pinout geometry is needed. Verify that the 150 mW thermal limit meets the application's duty cycle constraints.
The DTA123 series represents ROHM's standard line of bias-resistor-built-in transistors. This specific model utilizes the VMT3 package, offering a smaller footprint compared to traditional SOT-23 variants while maintaining similar electrical characteristics for general-purpose switching tasks.
Publicly confirmed substitutes include Panasonic Industry DRA3123J0L and Nexperia PDTA123JM,315. Verify pinout compatibility and exact resistor values before substitution.