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The DTA123JU3T106 is a PNP digital transistor manufactured by ROHM Semiconductor, featuring built-in bias resistors to simplify circuit design. It operates with a collector-emitter voltage (VCEO) of -50 V and a continuous collector current (IC) of -100 mA. The device includes an internal base resistor (R1) of 2.2 kΩ and an emitter-base resistor (R2) of 47 kΩ. Key electrical parameters include a DC current gain (hFE) of 80 minimum at specified conditions, a transition frequency (fT) of 250 MHz, and a maximum power dissipation (Pd) of 200 mW. It is housed in the UMT3 (SOT-323) surface-mount package.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and AEC-Q101 qualification status against the latest datasheet revision. Ensure storage conditions adhere to moisture sensitivity level requirements to prevent package damage prior to soldering.
Select this component for designs requiring a PNP digital transistor with specific 2.2 kΩ input resistance. Verify that the -50 V voltage rating and -100 mA current capacity meet system requirements. Consider the UMT3 package dimensions for PCB layout constraints and thermal management needs relative to the 200 mW power dissipation limit.
This part belongs to the DTA123 series of pre-biased transistors from ROHM Semiconductor. It shares pinout compatibility with variants like DTA123JUA and DTA123JU3HZG, though internal resistor values may differ. The series is designed for high-reliability applications, particularly in automotive environments where compact size and simplified wiring are critical.
DTA123JU3HZGT106 offers similar specifications with automotive qualification. DTA123YU3T106 provides different internal resistor values (R1=2.2kΩ, R2=10kΩ). Verify pinout and electrical parameters before substitution.