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The DTA123TM3T5G is a single PNP digital transistor manufactured by onsemi, designed for surface-mount applications. It integrates a built-in bias resistor network (BRT) within an SOT-723-3 package to simplify circuit design and reduce component count. The device features a collector-emitter voltage rating of 50 V and a continuous collector current capacity of 100 mA. Key electrical specifications include a typical input resistance of 2.2 kOhms with a resistor ratio of 0.1. The unit supports a wide operating temperature range from -55°C to +150°C and has a power dissipation rating of 260 mW.
Verify the specific suffix T5G against the manufacturer's latest datasheet to confirm pinout compatibility and RoHS status. Ensure that the ordering quantity aligns with standard reel or cut-tape availability constraints defined by the distributor. Cross-reference the part number with official onsemi documentation to validate manufacturing origin and quality certifications prior to procurement.
Select this component when a PNP configuration with integrated biasing is required for space-constrained designs. Compare the 2.2 kOhm input resistance against circuit drive requirements to ensure adequate base current. Evaluate the 50 V voltage rating against peak transient voltages in the application environment to maintain reliable operation margins.
This part belongs to the DTA123 series of biased resistor transistors from onsemi. It serves as the PNP counterpart to NPN variants such as the DTC123EM3T5G. The series is engineered to replace discrete resistor-transistor combinations, offering a standardized solution for digital switching applications across automotive, industrial, and consumer markets.
Direct functional substitutes include other PNP BRT devices with similar voltage and current ratings, such as the DTA123EM3T5G if package compatibility allows. Verify pinout alignment and thermal characteristics before substituting with parts from different manufacturers.