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Product Detailed Parameters
- Description：TRANS PREBIAS PNP 50V 0.1A UMT3
- Series：-
- Mfr：Rohm Semiconductor
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：2.2 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：33 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic：300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max)：-
- Frequency - Transition：250 MHz
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-70, SOT-323
- Supplier Device Package：UMT3
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Overview
The DTA123YU3T106 is a single PNP pre-biased transistor manufactured by ROHM Semiconductor. It integrates internal resistors R1 (2.2 kOhms) and R2 (10 kOhms) within a UMT3 surface-mount package, also identified as SC-70 or SOT-323. The device supports a maximum collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical characteristics include a DC current gain (hFE) minimum of 33 at 10 mA and 5 V, with a saturation voltage of 300 mV max at 500 µA base and 10 mA collector. It features a transition frequency of 250 MHz and a power dissipation rating of 200 mW.
Feature Summary
- Integrates bias resistors to simplify circuit design and reduce component count
- High-speed switching capability suitable for digital logic applications
- Compact surface-mount packaging for space-constrained designs
Applications
- Digital logic interface circuits
- Switching applications in portable devices
- General-purpose transistor replacement in embedded systems
Procurement Notes
Verify the specific suffix T106 corresponds to the required tape and reel quantity and packaging format. Confirm RoHS compliance status and automotive qualification if applicable to the target application. Ensure the UMT3/SOT-323 footprint matches the PCB layout constraints before finalizing procurement orders.
Selection Notes
Select this component when a PNP digital transistor with a 2.2 kOhm base resistor and 10 kOhm emitter resistor is required. Compare hFE and saturation voltage specifications against load requirements. Consider the 200 mW power dissipation limit and thermal management needs for the chosen operating environment.
Part Context
This part belongs to the DTA123 series of pre-biased transistors from ROHM Semiconductor. The series offers various resistor combinations and packages to accommodate different drive requirements. The YU3 variant specifically denotes the UMT3 package with defined internal resistance values.
FAQ
What are the internal resistor values for the DTA123YU3T106?
The device includes an internal base resistor (R1) of 2.2 kOhms and an emitter resistor (R2) of 10 kOhms.
What is the maximum collector-emitter voltage for this component?
The maximum collector-emitter breakdown voltage (VCEO) is rated at 50 V.
Is the DTA123YU3T106 available in an automotive grade version?
While some variants in the DTA123 family carry AEC-Q101 qualification, the specific DTA123YU3T106 datasheet does not explicitly confirm automotive qualification; verification against the official datasheet is recommended.
