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The DTA123YUAT106 is a PNP digital transistor manufactured by ROHM Semiconductor, housed in a UMT3 (SOT-323) surface-mount package. It integrates a single PNP transistor with built-in resistors, featuring typical values of 2.2 kOhms for the base resistor and 10 kOhms for the emitter-base resistor. The device supports a collector current of -100 mA and a supply voltage of -50 V, with a power dissipation rating of 200 mW. It offers a minimum DC current gain (hFE) of 20 at specific test conditions and operates up to a maximum frequency of 250 MHz.
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm RoHS compliance status and AEC-Q101 qualification if automotive application is required. Ensure storage conditions adhere to moisture sensitivity level specifications to prevent package damage during soldering processes.
Select this component for designs requiring compact SMD packaging with integrated biasing resistors. Consider the -50V collector-emitter voltage and -100mA continuous current limits against load requirements. Evaluate thermal management needs based on the 200mW power dissipation rating within the UMT3 footprint constraints.
This part belongs to the DTA123 series of pre-biased transistors from ROHM Semiconductor. It is functionally related to variants like DTA123EUAT106 but differs in internal resistor configurations. The UMT3 package provides a small form factor alternative to larger transistor packages while maintaining comparable electrical performance for space-constrained PCB layouts.
DTA123EUAT106 is listed as a recommended replacement with the same pinout and package.