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The DTA124XE3HZGTL is a PNP digital transistor from ROHM Semiconductor, housed in an SOT-416 (EMT3) surface-mount package. It integrates bias resistors with R1 and R2 values of 22 kOhms each, yielding a ratio of 2.1. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of -50 V, continuous collector current of -100 mA, and power dissipation of 150 mW. The device features a minimum DC current gain (hFE) of 68 at -5 V and -5 mA, with a transition frequency of 250 MHz. It operates up to +150°C and meets AEC-Q101 automotive standards.
Verify the specific suffix against official datasheets to confirm resistor ratios and packaging options. Confirm AEC-Q101 compliance requirements for automotive designs. Check RoHS status and lead times directly with authorized distributors. Ensure thermal management aligns with the 150 mW dissipation limit.
Select this component for PNP switching applications requiring integrated biasing. Compare hFE and VCEO ratings against load requirements. Consider the SOT-416 footprint for PCB layout constraints. Verify compatibility with complementary NPN types like DTC124EE3HZG if differential signaling is needed.
This part belongs to ROHM's DTA124 series of bias-resistor-built-in transistors. It shares the same internal structure as the DTA124EETL but differs in packaging and automotive qualification. The series is designed for low-power switching and logic interface applications.
Direct substitutes include DTA124EETL for non-automotive use or DTC124EE3HZG for complementary NPN functionality. Verify pinout and electrical limits before substitution.
The typical resistor ratio is 2.1, with both R1 and R2 having a value of 22 kOhms.
Yes, it is certified under the AEC-Q101 standard for automotive grade reliability.
The maximum operating junction temperature is +150°C.