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The DTA124EET1G is a single PNP digital transistor (BRT) manufactured by onsemi, designed to replace discrete biasing networks. It integrates a PNP transistor with internal resistors in an SOT-723-3 surface-mount package. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input base resistor of 22 kOhms and a typical resistor ratio of 0.047. DC current gain (hFE) ranges from a minimum of 80 to 130. Power dissipation is rated at 260 mW, with an operating temperature range spanning from -55 °C to +150 °C.
Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors, as production cycles may vary based on volume requirements and regional availability constraints.
Select this component when a single PNP switch with fixed biasing is required instead of discrete resistors. Ensure the 50 V collector-emitter voltage rating exceeds the maximum circuit voltage. Verify that the 100 mA continuous current limit accommodates the load requirements without exceeding the 260 mW power dissipation capability under expected thermal conditions.
This part belongs to the DTA124 series of pre-biased transistors offered by onsemi. These devices are engineered to streamline the design of digital logic interfaces and switching applications by combining active and passive components into a single semiconductor package, thereby improving reliability and reducing assembly complexity compared to discrete solutions.
Cross-reference with other manufacturers' PNP BRTs featuring similar 50 V ratings and 22 kOhm base resistance. Verify pinout compatibility and package dimensions (SOT-723) before substitution to ensure mechanical fit and electrical equivalence in the existing circuit design.