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The DTA124EM3T5G is a single PNP digital transistor (BRT) manufactured by onsemi, housed in an SOT-723-3 surface-mount package. It integrates a PNP bipolar junction transistor with a base resistor network to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. The device features a typical input resistance of 22 kOhms and a typical resistor ratio of 0.047. DC current gain (hFE) ranges from 80 to 130. Power dissipation is rated at 260 mW, with an operating temperature range spanning from -55°C to +150°C.
Verify the exact part number suffix against official onsemi documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's material declaration. Cross-reference the datasheet revision date to ensure alignment with current design constraints and lead time estimates provided by authorized distributors.
Select this component when a PNP configuration with integrated base resistance is required for compact designs. Ensure the 50 V voltage rating and 100 mA current capacity meet the load requirements. Compare the 22 kOhm input resistance against driving source capabilities to verify adequate signal levels for reliable switching operation in the target application.
This component belongs to the DTA124XM3 series of pre-biased transistors from onsemi. It shares the SOT-723 form factor with other devices in the family but differs in internal resistor values and transistor polarity. The M3 suffix typically indicates lead-free and halogen-free construction compliant with modern environmental standards.
Direct substitutes may include other PNP BRTs in SOT-723 packages with similar VCEO and Ic ratings. Verify equivalent resistor ratios and hFE ranges before substitution. Check pinout compatibility to ensure no redesign is required for existing PCB layouts.