SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DTA124XU3HZGT106 is a single PNP bias resistor built-in transistor manufactured by ROHM Semiconductor. It features an integrated base resistor (R1) of 22 kOhms and an emitter-base resistor (R2) of 47 kOhms, with a typical resistance ratio of 2.1. The device supports a collector-emitter voltage (VCEO) of -50 V and a continuous collector current of -100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 68 at -5 mA and -5 V, a maximum operating frequency of 250 MHz, and a power dissipation rating of 200 mW. It operates within a temperature range up to +150°C and is housed in a SOT-323-3 package.
Verify the specific suffix GT106 against official ROHM documentation to confirm packaging details and tape-and-reel specifications. Ensure compatibility with SOT-323 footprint requirements during PCB layout. Cross-reference the AEC-Q101 qualification status if the application mandates automotive-grade certification. Confirm that the 22k/47k resistor values align with the target circuit's drive requirements.
Select this component when a PNP configuration with a 22k input resistance is required. The 47k emitter-base resistor provides specific leakage characteristics distinct from other ratios in the series. Consider the 200mW power dissipation limit for thermal management in dense layouts. Verify that the -50V rating meets the system's voltage headroom needs.
This part belongs to the DTA124X series of bias resistor built-in transistors. It shares the same internal topology as variants like DTA124XU3T106 but may differ in packaging or specific qualification grades. The 'EU3' or similar suffixes often denote specific automotive or industrial grade variations within the broader DTC/DTA family.
Direct substitutes include DTA124XU3T106 and DTA124XE3HZGTL, provided the package and resistor values match. Verify pinout compatibility and ensure the alternative meets the same AEC-Q101 requirements if used in automotive contexts.