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The DTA143EM3T5G is a Bias Resistor Transistor (BRT) featuring a single PNP transistor integrated with a monolithic bias resistor network. It includes a series base resistor (R1) of 4.7 kΩ and a base-emitter resistor (R2) of 4.7 kΩ, yielding a typical resistor ratio of 1.0. The device supports a continuous collector current of 100 mA and withstands a collector-emitter voltage of 50 V. It operates within a junction temperature range of -55°C to +150°C and dissipates up to 260 mW in the SOT-723 package.
Verify the specific ordering suffix T5G corresponds to the SOT-723 package and tape-and-reel shipping configuration. Confirm that the M3 designation indicates Pb-free compliance and RoHS adherence as specified in the manufacturer's documentation. Ensure the part marking matches the official data sheet diagram for the selected package style.
Select this component when a compact PNP solution with integrated biasing is required. The fixed 4.7 kΩ resistor values are suitable for standard logic levels. Consider the thermal derating characteristics if operating near the maximum junction temperature limit. Verify input voltage requirements against the specified forward and reverse limits.
This device belongs to the DTA143E family of digital transistors manufactured by onsemi. It shares functional similarities with other BRT devices like the DTC123 series but utilizes PNP polarity. The product line is designed to streamline circuit design by consolidating transistor and resistor functions into a single surface-mount package.
Direct substitutes include other PNP BRTs with similar resistor values and voltage ratings, such as the DTA143EE or MUN2132 variants, provided the package footprint and pinout compatibility are verified.