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The DTA143TXV3T1G is a single PNP digital transistor manufactured by onsemi, housed in an SC-89 surface-mount package. It integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor to replace discrete components. Key electrical parameters include a maximum collector current (Ic) of 100 mA, a collector-emitter breakdown voltage (Vceo) of 50 V, and a maximum power dissipation (Pd) of 300 mW. The device features a minimum DC current gain (hFE) of 160 at Ic=5mA and Vce=-10V, with a typical base resistor value of 4.7 kOhms.
Verify the complete part number suffix, as 'DTA143TXV3T1' may refer to the DTA143TXV3T1G variant. Confirm RoHS compliance status and specific packaging options such as cut tape or reel quantities directly from the manufacturer's official documentation before procurement.
Select this component for designs requiring a compact PNP solution with integrated biasing. Ensure the required hFE meets the minimum specification of 160 and that the operating temperature range fits within the device limits. Verify that the SC-89 package dimensions are compatible with the target PCB layout.
This component belongs to the DTA143 series of NPN/PNP silicon digital transistors. These devices are engineered to replace a single transistor and its associated external resistor network, offering a streamlined alternative for standard logic interfacing and signal switching tasks in consumer and industrial electronics.
Compatible substitutes include other PNP digital transistors with similar Vceo and Ic ratings, such as the DTA143TM3T5G or PDTA143TT. Verify pinout compatibility and thermal characteristics when substituting across different package types like SOT-23 or SOT-723.