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The DTA143XETL is a PNP digital transistor manufactured by ROHM Semiconductor, featuring built-in bias resistors within a compact SOT-416 (EMT3) surface-mount package. It operates with a collector-emitter voltage of -50V and a maximum collector current of -0.1A. The device includes an input resistance (R1) ranging from 1kΩ to 4.7kΩ and an emitter-base resistance (R2) between 1kΩ and 10kΩ. Power dissipation is rated at 0.15W, with a DC current gain (hFE) specified from 30 to 600. Storage temperatures range from -55°C to 150°C, and the component complies with RoHS standards.
Verify the specific ordering suffix to confirm the tape-and-reel quantity and packaging configuration. Ensure the procurement channel provides original manufacturer documentation to validate authenticity. Check for RoHS compliance status if environmental regulations apply to the final assembly. Confirm availability as this is a standard-grade product not recommended for automotive use.
Select this component when a PNP digital transistor with moderate current handling and low power dissipation is required. Compare input resistance values against the target logic family to ensure proper drive capability. Consider the SOT-416 footprint constraints during PCB layout. Verify that the application does not require automotive qualification, as this part is designated for general industrial or consumer use.
The DTA143XETL belongs to ROHM's standard digital transistor series, which integrates transistors and bias resistors into single packages. This series aims to reduce board space and assembly costs compared to discrete resistor-transistor combinations. The 'TL' suffix typically indicates a specific taping quantity and packaging format for automated insertion.
Direct pin-compatible replacements include other PNP digital transistors with similar R1/R2 ratios and VCEO ratings. Verify that substitute components match the SOT-416 package dimensions and thermal dissipation characteristics. Cross-reference hFE ranges to ensure equivalent switching performance in the target circuit.