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The DTA143XU3T106 is a PNP digital transistor manufactured by ROHM Semiconductor, housed in an SOT-323 (UMT3) surface-mount package. It integrates bias resistors with typical values of R1 = 4.7 kΩ and R2 = 10 kΩ. The device supports a collector-emitter voltage (VCEO) of -50 V and a continuous collector current (Ic) of -100 mA. Key electrical parameters include a DC current gain (hFE) minimum of 30 at Ic = -10 mA and Vce = -5 V, a transition frequency of 250 MHz, and power dissipation of 200 mW. The emitter-base voltage (VEBO) is rated at -1.3 V.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific packaging options such as cut tape or reel quantities. Ensure the ordering suffix matches the required automotive grade specifications. Cross-reference datasheet revisions to confirm parameter consistency before integration into production designs.
Select this PNP variant when negative logic inversion or PNP-based switching is required. The integrated resistor ratio of approximately 2.1 suits standard TTL/CMOS interface levels. Consider the complementary NPN type DTC143XU3HZG for paired applications. Verify thermal management capabilities given the 200 mW power dissipation limit in the compact SOT-323 package.
This component belongs to the DTA143 series of bias-resistor-built-in transistors from ROHM. It shares the same functional architecture as other members like DTA143EU3 but differs in internal resistor values and automotive qualification. The UMT3 package designation indicates a specific footprint compatible with SC-70 standards, facilitating dense PCB layouts.
The typical base resistor (R1) is 4.7 kΩ and the typical emitter-base resistor (R2) is 10 kΩ.
Yes, the DTA143XU3T106 complies with the AEC-Q101 standard for automotive-grade reliability.
The storage temperature range extends from -55°C to +150°C.