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The DTA143ZE3TL is a PNP digital transistor from the ROHM Semiconductor DTA143Z series, housed in an EMT3 (SOT-416) surface-mount package. It integrates bias resistors R1 and R2 with a single PNP epitaxial planar silicon transistor to simplify circuit design. The device supports a supply voltage of -50V and a maximum collector current of -100mA. Electrical characteristics include a typical input resistance of 4.7kΩ, a transition frequency of 250MHz, and a DC current gain of 80 at -10mA output. Power dissipation is rated at 150mW, with an operating junction temperature range up to +150°C.
Verify the specific ordering suffix against the manufacturer's datasheet to confirm the exact packaging format and taping specifications. Confirm RoHS compliance status and long-term availability plans directly with authorized distributors or the manufacturer before placing orders.
Select this component for designs requiring a compact PNP digital switch with integrated biasing. Ensure the application operates within the -50V supply limit and -100mA current rating. Consider the complementary NPN DTC143Z series if an NPN configuration is required for the same circuit topology.
This part belongs to the DTA143Z series of Bias Resistor Built-in Transistors (BRBTs). The series includes variants with different packages such as SOT-723, SOT-323, and SOT-346. The DTA143ZE3 variant specifically utilizes the EMT3 package code, distinguishing it from other physical form factors in the family.
Complementary NPN types are available in the DTC143Z series. Other package variants within the DTA143Z series may serve as functional substitutes if pin compatibility and thermal ratings align with the design requirements.
The typical resistance ratio of R2 to R1 is 10, with R1 being 4.7kΩ and R2 being 47kΩ.
The maximum power dissipation for the DTA143ZE3 (EMT3 package) is 150mW when mounted on a reference land.
The transition frequency (fT) is typically 250MHz under conditions of VCE = -10V and IE = 5mA.