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Product Detailed Parameters
- Description：SMALL SIGNAL BIPOLAR TRANSISTOR
- Series：-
- Mfr：onsemi
- Package：Bulk
- Resistors Included：R1 and R2
- Transistor Type：PNP - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：3 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：350 mW
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92 (TO-226)
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Overview
The DTB113EET1G is a PNP digital transistor manufactured by onsemi, designed as a pre-biased single NPN/Bipolar Junction Transistor (BJT) solution. It integrates biasing resistors to replace discrete components and external networks. Key electrical parameters include a collector-emitter voltage (Vceo) of -50 V and a maximum collector current (Ic) of -100 mA. The device features an input resistance (R1) of 1 kΩ and an emitter-base resistance (R2) of 1 kΩ. Power dissipation is rated at 200 mW. It is housed in an SC-75 (SOT-416) surface-mount package.
Feature Summary
- Integrates biasing resistors to simplify circuit design by eliminating the need for external resistor networks.
- Provides a compact alternative to discrete transistors and associated passive components.
- Designed for applications requiring simple on/off switching control with minimal external circuitry.
Applications
- Inverter circuits
- Interface logic driving
- General-purpose driver applications
Procurement Notes
Verify the specific suffix against official datasheets to confirm pinout and electrical characteristics, as variations exist within the DTC/DTB series. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Ensure the SC-75 footprint matches your PCB layout constraints before finalizing procurement.
Selection Notes
Select this component when a PNP configuration with integrated 1kΩ biasing resistors is required. Compare R1 and R2 values against other models like DTC113E (NPN) or DTB113ZC (different R2 value) to ensure correct voltage division. Verify that the -50V rating and -100mA current capacity meet the load requirements of the target application.
Part Context
This part belongs to the DTC/DTB family of digital transistors from onsemi. These devices consolidate a transistor and its biasing network into a single package. The 'DTB' prefix typically denotes PNP polarity, while 'DTC' denotes NPN. This specific model offers a standardized 1kΩ/1kΩ resistor ratio suitable for general logic interfacing.
Replacement Considerations
Public confirmed substitutes include the DTB113EC and DTB113ZC from ROHM Semiconductor, which share similar PNP digital transistor specifications and SOT-23/SST3 packaging. Verify pin compatibility and exact resistance values before substitution.
