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The DTB113ECT116 is a PNP digital transistor (pre-biased BJT) manufactured by Rohm Semiconductor. It integrates bias resistors within the SST3 (SOT-23) package to simplify circuit design. Key electrical parameters include a collector-emitter voltage (Vceo) of -50 V, a continuous collector current (Ic) of -0.5 A, and a power dissipation (Pd) of 200 mW. The device features an input resistance (R1) of 1 kΩ and an emitter-base resistance (R2) of 1 kΩ. It operates with a transition frequency of 200 MHz and maintains a DC current gain (hFE) of at least 33 at Ic=50mA, Vce=-5V.
Verify the specific suffix ECT116 to confirm the tape-and-reel packaging format containing 3000 units per reel. Confirm RoHS compliance status and ensure the component meets the required moisture sensitivity level for the intended assembly process. Check for automotive qualification if used in vehicle systems, as standard grades may not be recommended for such environments.
Select this component when a PNP pre-biased transistor with 1kΩ/1kΩ internal resistors is required. Ensure the -50V voltage rating and -0.5A current capacity meet the load requirements. Consider the SST3 package size constraints and verify that the 200MHz frequency response is sufficient for the signal speed. Compare against complementary NPN types like DTD113EC if push-pull configurations are needed.
This part belongs to the DTx series of digital transistors from Rohm Semiconductor. These devices combine bipolar junction transistors with integrated bias networks to reduce board space and component count. The DTB113ECT116 specifically addresses designs needing PNP logic inversion with fixed bias ratios, offering a standardized solution for consumer and industrial electronics.
DTB113ECHZGT116 is listed as a parameter-equivalent substitute by the manufacturer.