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The DTB113ZSTP is a PNP digital transistor manufactured by ROHM Semiconductor, featuring built-in bias resistors to simplify circuit design. It operates with a supply voltage of -50V and a continuous collector current of -500mA. The device utilizes thin-film resistors for complete isolation, allowing positive input biasing while minimizing parasitic effects. Key electrical characteristics include an input resistance (R1) of 1kΩ, a DC current gain (GI) minimum of 56 at -50mA/-5V, and a transition frequency (fT) of 200MHz. Power dissipation is rated at 200mW, with a junction temperature range from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging type and reel specifications. Ensure compatibility with surface mount assembly processes. Confirm RoHS compliance status prior to integration into final products. Validate that the component meets the intended environmental operating conditions.
Select this component for applications requiring PNP switching with integrated biasing. Consider the -50V supply limit and -500mA current capacity during circuit planning. Evaluate the 200mW power dissipation rating against thermal constraints. Verify that the SMT3 package dimensions fit the available PCB footprint.
This part belongs to the DTB113 series of digital transistors from ROHM Semiconductor. It shares core electrical specifications with variants like DTB113ZK and DTB113ZS, differing primarily in packaging codes such as SPT or SMT3. The series is designed for general-purpose electronic equipment rather than high-reliability automotive or aerospace applications.
DTB113ZK and DTB113ZS are documented equivalents within the same product family. These alternatives share identical pinouts and electrical characteristics but may differ in physical package dimensions or taping specifications. Verify mechanical fit before substitution.