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The DTB114GCT116 is a single PNP digital transistor from the ROHM Semiconductor DTx series, housed in an SOT-23-3 surface-mount package. It integrates bias resistors to simplify circuit design. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of -50 V and a continuous collector current of -500 mA. The device features a typical input resistance of 10 kOhms and a minimum DC current gain (hfe) of 56 at -50 mA and -5 V. It supports a maximum operating frequency of 200 MHz with a power dissipation rating of 200 mW and a maximum operating temperature of +150 C.
Verify the specific suffix 'T116' corresponds to the required tape-and-reel packaging configuration. Confirm RoHS compliance status through official documentation before integration. Ensure the ordering part number matches the exact electrical specifications required for the target application design.
Select this component when a PNP digital transistor with -500 mA capacity and -50 V breakdown is required. The 10 kOhm input resistor value suits standard logic interface levels. Verify that the 200 mW power dissipation limit accommodates the thermal environment of the final assembly.
This part belongs to the DTx series of pre-biased transistors manufactured by ROHM Semiconductor. These devices combine bipolar junction transistors with internal resistive networks to reduce board space and assembly complexity compared to discrete resistor-transistor combinations.
Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with other PNP digital transistors having identical -50 V, -500 mA ratings and SOT-23-3 packages if substitution is necessary.