SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The DTB114GKT146 is a PNP digital transistor from ROHM Semiconductor, featuring built-in bias resistors for simplified circuit design. It operates with a collector-emitter voltage of -50V and a continuous collector current of -500mA. The device includes an internal resistor network with typical values of R1=10kΩ and R2=10kΩ. Key electrical parameters include a DC current gain (hFE) of at least 33 at -10mA/-5V, a transition frequency of 200MHz, and a power dissipation rating of 200mW. It is housed in a compact SOT-23-3 surface-mount package.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering suffix matches the required packaging format. Ensure compliance with RoHS directives and check for any end-of-life notifications prior to procurement.
Select this component for designs requiring PNP logic inversion with integrated biasing. Verify that the -50V voltage rating and -500mA current capacity meet system requirements. Consider the SOT-23-3 footprint constraints during PCB layout planning.
This part belongs to the ROHM DTx series of digital transistors, which integrate bipolar junction transistors with pre-biased resistors. The series offers various configurations to replace multiple discrete components, reducing board space and assembly complexity in modern electronic designs.
Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing the component in existing designs.
The typical resistor values are R1 = 10 kOhms and R2 = 10 kOhms.
Yes, the DTB114GKT146 is AEC-Q101 qualified for automotive applications.
The maximum power dissipation is 200 mW.