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The DTB114TKT146 is a single pre-biased PNP bipolar junction transistor (BJT) manufactured by ROHM Semiconductor. It integrates bias resistors within an SMT3 package, specifically SC-59 or SOT-23-3. Key electrical parameters include a collector-emitter voltage (VCEO) of 40 V, a continuous collector current (Ic) of 500 mA, and a transition frequency (fT) of 200 MHz. The device has a maximum power dissipation (Pd) of 200 mW and operates at a maximum temperature of +150°C. It is designed for digital switching applications requiring built-in biasing.
Verify the specific suffix TKT146 to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status through official datasheets. Check for obsolescence notices, as some variants may be recommended against new designs. Validate thermal performance requirements against the 200 mW dissipation limit in the target application environment.
Select this component when a PNP digital transistor with integrated biasing is required for automotive or consumer applications. Ensure the 40 V voltage rating and 500 mA current capacity meet the load requirements. Consider the SMT3 package size for PCB layout constraints. Verify that the 200 MHz frequency response is sufficient for the switching speed needs of the circuit.
This part belongs to the DTB114 series of single pre-biased digital transistors from ROHM. These devices are engineered for reliability in automotive environments, often meeting AEC-Q101 standards. The series offers various resistor combinations and polarity options (NPN/PNP) to suit different logic interface requirements while maintaining consistent form factors.
Direct substitutes include other ROHM parts in the DTB114 family with matching PNP polarity and similar electrical ratings, such as DTB114EKAT146 (NPN variant, requires circuit adjustment). Cross-manufacturer replacements must match the 40V/500mA/200MHz specs and SOT-23-3 footprint.