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The DTB123ECT116 is a single PNP digital transistor manufactured by ROHM Semiconductor, featuring built-in bias resistors within an SOT-23-3 (SST3) surface-mount package. It supports a collector-emitter voltage of -50 V and a continuous collector current of -500 mA with a power dissipation rating of 200 mW. The device includes typical input resistance values of 1 kΩ or 2.2 kΩ and exhibits a minimum DC current gain (hFE) of 47 at -50 mA and -5 V. Operating frequencies reach up to 200 MHz, with a maximum operating temperature of +150°C and an emitter-base voltage of -3 V.
Verify the specific suffix configuration against official datasheets to ensure correct resistance values and polarity. Confirm RoHS compliance status and AEC-Q101 qualification if automotive usage is intended. Check manufacturer documentation for moisture sensitivity levels and recommended soldering profiles to prevent component damage during assembly.
Select this component when a PNP digital transistor with integrated biasing is required for low-voltage digital switching. Ensure the -50 V voltage rating and -500 mA current capacity meet the circuit demands. Compare internal resistance values against microcontroller output drive capabilities to verify proper logic level interfacing without additional external components.
This part belongs to the DTx series of digital transistors from ROHM Semiconductor. These devices combine bipolar junction transistors with internal bias networks to simplify circuit design. The SST3 package variant provides a standardized footprint compatible with common surface-mount assembly processes used in consumer and industrial electronics.
The typical input resistance (R1) is available in 1 kΩ or 2.2 kΩ configurations depending on the specific sub-type.
Standard versions are not recommended for automotive equipment; however, specific variants like the DTB123YCHZGT116 hold AEC-Q101 qualification.
The maximum operating temperature is +150°C.