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The DTB123TCT116 is a PNP digital transistor from ROHM Semiconductor, featuring an integrated bias resistor network within a compact SOT-23 (SST3) surface-mount package. It provides a collector-emitter voltage of -50 V and a continuous collector current of -500 mA with a power dissipation rating of 200 mW. The device includes a typical base input resistance of 1 kOhm and maintains a minimum DC current gain of 33 at -10 mA and -5 V. Operating frequencies reach up to 200 MHz, while the maximum operating temperature extends to +150 °C.
Verify the specific suffix TCT116 against official datasheets to confirm packaging details such as cut tape versus reel quantities. Ensure compatibility with RoHS directives if required by the target market. Confirm that the -50V rating aligns with system voltage requirements before finalizing procurement orders.
Select this component when a PNP configuration with built-in biasing is necessary to reduce board space and design complexity. Compare the 1 kOhm input resistance against other variants like the 2.2 kOhm option if different drive currents are needed. Verify that the 200 mW power dissipation limit accommodates the thermal conditions of the intended application.
This part belongs to the ROHM DTx series of digital transistors, which combine bipolar junction transistors with internal resistor networks. The series offers various polarities and resistance values to support diverse logic interface needs without requiring discrete external components.
Check for equivalent parts with matching polarity and voltage ratings. Verify that substitute components maintain similar hFE characteristics and package dimensions to ensure mechanical fit and electrical performance parity.