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The DTB123YCHZGT116 is a PNP digital transistor from ROHM Semiconductor, featuring built-in bias resistors in an SOT-23 (SST3) surface-mount package. It operates with a collector-emitter voltage of -50 V and a continuous collector current of -0.5 A. The device includes a base resistor (R1) of 2.2 kΩ and an emitter-base resistor (R2) of 10 kΩ. Key electrical parameters include a DC current gain (hFE) of at least 56 at -50 mA and -5 V, a transition frequency of 200 MHz, and a power dissipation rating of 200 mW. It meets AEC-Q101 automotive standards.
Verify the specific suffix GT116 against official datasheets to confirm reel packaging quantities and tape specifications. Ensure compatibility with existing PCB footprints for the SST3 package. Confirm that the R1/R2 resistance values match the target logic interface requirements before finalizing component selection.
Select this component when a PNP digital transistor with a 2.2 kΩ input resistor and 10 kΩ emitter-base resistor is required. Consider the 200 MHz transition frequency for high-speed switching needs. Verify that the -50 V collector-emitter voltage rating exceeds the maximum load voltage in the application circuit.
This part belongs to the DTB123 series of pre-biased PNP transistors manufactured by ROHM Semiconductor. The series is designed for automotive and industrial applications requiring high reliability and simplified biasing networks. The DTB123YCHZGT116 variant specifically denotes the PNP polarity, resistance values, and automotive qualification status within the broader product family.
Check for complementary NPN types like DTD123YCHZG if differential signaling is needed. Verify pinout compatibility with other SOT-23 digital transistors before substitution. Ensure replacement parts meet the same AEC-Q101 automotive grade requirements.