DTB123YUT106

Overview

The DTB123YUT106 is a PNP pre-biased transistor manufactured by ROHM Semiconductor, housed in a UMT3 surface-mount package. It features a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 500 mA. The device includes built-in bias resistors with R1 at 2.2 kOhms and R2 at 10 kOhms. Key electrical parameters include a DC current gain (hFE) minimum of 56 at 50 mA and 5 V, a transition frequency of 200 MHz, and power dissipation of 200 mW. It operates up to +150°C and meets AEC-Q101 automotive qualification standards.

Feature Summary

• Integrates dual bias resistors (R1 and R2) to simplify circuit design by eliminating external input components.
• Automotive-grade reliability certified under AEC-Q101 standards for robust performance in vehicle electronics.
• High-speed switching capability supported by a 200 MHz transition frequency.

Applications

• Automotive electronic control units requiring qualified discrete components
• General-purpose inverter circuits utilizing built-in biasing
• Switching applications within portable devices

Procurement Notes

Verify the specific suffix T106 corresponds to the required tape-and-reel packaging configuration during sourcing. Confirm that the UMT3 footprint matches the target PCB layout dimensions. Ensure the procurement channel provides documentation verifying AEC-Q101 compliance for automotive integration requirements.

Selection Notes

Select this component when a PNP digital transistor with 500 mA current capacity and 50 V breakdown is required. The integrated resistor ratio of approximately 4.5 (R2/R1) suits standard logic interface applications. Consider the UMT3 package size constraints relative to available board space and thermal dissipation needs.

Part Context

This part belongs to the ROHM DTB series of pre-biased transistors designed for high-density mounting. The UMT3 package represents a compact form factor suitable for modern miniaturized electronics. As a single PNP unit, it serves as a direct replacement for discrete BJT and resistor combinations in signal switching roles.

Replacement Considerations

Cross-reference with other ROHM PNP pre-biased transistors in the UMT3 package, such as the DTB123TCHZGT116, ensuring identical pinout and electrical ratings before substitution.