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The DTB523YETL is a PNP digital transistor with built-in bias resistors manufactured by ROHM Semiconductor. It features a single configuration in an EMT3 (SOT-416) surface-mount package. Key electrical parameters include a collector-emitter breakdown voltage of 12 V, a continuous collector current of 500 mA, and a transition frequency of 260 MHz. The device incorporates a typical base resistor (R1) of 2.2 kOhms and an emitter-base resistor (R2) of 10 kOhms. It operates with a maximum power dissipation of 150 mW and supports junction temperatures up to +150 C.
Verify the specific ordering suffix to confirm the tape-and-reel quantity and packaging format. Ensure the component meets RoHS3 compliance requirements for your manufacturing process. Confirm that the EMT3 package dimensions align with your PCB footprint specifications before finalizing procurement orders.
Select this component when a PNP digital transistor with a 12 V rating and 500 mA current capacity is required. The integrated 2.2 kOhm input resistor simplifies drive circuitry. Consider the 150 mW power dissipation limit and thermal management needs for high-density layouts. Verify compatibility with existing NPN alternatives if swapping from similar series parts.
This part belongs to the DTB523YE series of digital transistors from ROHM Semiconductor. These devices are designed as standard replacements for discrete transistor-resistor combinations. The EMT3 package provides a small form factor for space-constrained designs. The series offers consistent performance characteristics for general electronic applications.
The DTC523YETL is a direct NPN counterpart within the same series. For pin-compatible swaps, verify polarity differences carefully. Other DTB series variants may offer different resistance ratios or voltage ratings.