DTB743EMT2L

DTB743EMT2L

$0.09
  • Description:TRANS PREBIAS PNP 30V 0.2A VMT3
  • Series:-

SKU:cc4a176a4738 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS PNP 30V 0.2A VMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR)
  • Resistors Included:R1 and R2
  • Transistor Type:PNP - Pre-Biased
  • Current - Collector (Ic) (Max):200 mA
  • Voltage - Collector Emitter Breakdown (Max):30 V
  • Resistor - Base (R1):4.7 kOhms
  • Resistor - Emitter Base (R2):4.7 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:115 @ 100mA, 2V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:260 MHz
  • Power - Max:150 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:VMT3

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DTB743EMT2L

Overview

The DTB743EMT2L is a PNP digital transistor with built-in resistors, manufactured by ROHM Semiconductor. It features an EMT3 (SOT-723) surface-mount package and operates with a supply voltage of -30V and a collector current of -200mA. The device incorporates thin-film bias resistors configured as R1=4.7kΩ and R2=4.7kΩ, providing a DC current gain (hFE) of at least 115 and a transition frequency of 260MHz. It achieves a low saturation voltage (VCE(sat)) of -300mV at -100mA and dissipates up to 150mW.

Feature Summary

  • Features a lower VCE(sat) compared to conventional products for improved efficiency.
  • Built-in bias resistors allow inverter circuit configuration without external input resistors.
  • Utilizes thin-film resistors with complete isolation to eliminate parasitic effects and enable positive input biasing.

Applications

  • Inverter circuits
  • Interface applications
  • Driver circuits

Procurement Notes

Verify the specific ordering suffix against the manufacturer's documentation to confirm packaging details. The T2L suffix indicates a taping packaging format with a basic ordering unit of 8000 pieces. Ensure compatibility with the EMT3 footprint during procurement planning.

Selection Notes

Select this component when a PNP digital transistor with integrated biasing is required for compact designs. The low saturation voltage makes it suitable for applications demanding efficient switching performance. Verify that the -30V supply rating aligns with the target circuit requirements.

Part Context

This part belongs to the DTB743 series of low VCE(sat) digital transistors. It serves as a pre-biased solution designed to simplify circuit design by integrating NPN or PNP transistors with internal resistors, reducing the component count typically needed for discrete driver stages.

Replacement Considerations

Consult official substitution lists for verified equivalents. Generic replacements may not match the specific thin-film resistor characteristics or the low saturation voltage profile defined in the datasheet.

FAQ

What is the resistance value of the built-in bias resistors?

The built-in bias resistors are configured with R1 equal to 4.7kΩ and R2 equal to 4.7kΩ.

What is the maximum power dissipation of the DTB743EMT2L?

The maximum power dissipation (PD) is 150mW at an ambient temperature of 25°C.

Does the device support positive input biasing?

Yes, the bias resistors consist of thin-film resistors with complete isolation, allowing for positive biasing of the input.

DTB743EMT2LDTB743EMT2L
$0.09
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