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The DTB743EMT2L is a PNP digital transistor with built-in resistors, manufactured by ROHM Semiconductor. It features an EMT3 (SOT-723) surface-mount package and operates with a supply voltage of -30V and a collector current of -200mA. The device incorporates thin-film bias resistors configured as R1=4.7kΩ and R2=4.7kΩ, providing a DC current gain (hFE) of at least 115 and a transition frequency of 260MHz. It achieves a low saturation voltage (VCE(sat)) of -300mV at -100mA and dissipates up to 150mW.
Verify the specific ordering suffix against the manufacturer's documentation to confirm packaging details. The T2L suffix indicates a taping packaging format with a basic ordering unit of 8000 pieces. Ensure compatibility with the EMT3 footprint during procurement planning.
Select this component when a PNP digital transistor with integrated biasing is required for compact designs. The low saturation voltage makes it suitable for applications demanding efficient switching performance. Verify that the -30V supply rating aligns with the target circuit requirements.
This part belongs to the DTB743 series of low VCE(sat) digital transistors. It serves as a pre-biased solution designed to simplify circuit design by integrating NPN or PNP transistors with internal resistors, reducing the component count typically needed for discrete driver stages.
Consult official substitution lists for verified equivalents. Generic replacements may not match the specific thin-film resistor characteristics or the low saturation voltage profile defined in the datasheet.
The built-in bias resistors are configured with R1 equal to 4.7kΩ and R2 equal to 4.7kΩ.
The maximum power dissipation (PD) is 150mW at an ambient temperature of 25°C.
Yes, the bias resistors consist of thin-film resistors with complete isolation, allowing for positive biasing of the input.