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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC75
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：1 kOhms
- Resistor - Emitter Base (R2)：1 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：3 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 5mA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SC-75, SOT-416
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Overview
The DTC113EET1G is an NPN Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of two resistors: a series base resistor (R1) and a base-emitter resistor (R2). Both resistors are specified at 1 kOhm. The device operates with a maximum collector-emitter voltage of 50 Vdc and a continuous collector current of 100 mAdc. It features a DC current gain (hFE) of 3.0 to 5.0 at IC = 5.0 mA and VCE = 10 V. The component is housed in a SC-75 package (Case 463), which measures 1.60 x 0.80 x 0.80 mm. Total device dissipation is rated at 200 mW at TA = 25°C.
Feature Summary
- Integrates a single NPN transistor with a monolithic bias network comprising a series base resistor and a base-emitter resistor to replace discrete components.
- Designed to simplify circuit design by reducing the overall component count and minimizing board space requirements.
Applications
- Replacing single devices and external resistor bias networks in digital logic circuits.
- General-purpose switching applications requiring integrated biasing.
- Automotive and other applications requiring unique site and control change requirements when ordered with S or NSV prefix.
Procurement Notes
Verify the specific ordering suffix to confirm the package type and shipping quantity. The standard DTC113EET1G designation corresponds to the SC-75 package shipped in tape and reel quantities of 3000 units. Confirm RoHS compliance and Pb-free status as indicated by the /C0071 marking. Ensure the application environment does not exceed the maximum ratings for collector-base or collector-emitter voltages.
Selection Notes
Select this component when a compact NPN solution with integrated 1 kOhm base and emitter resistors is required. The SC-75 package offers a small footprint suitable for space-constrained designs. Consider the thermal derating characteristics if operating above 25°C ambient temperature. Verify that the required DC current gain and saturation voltage meet the specific load conditions of the target application.
Part Context
This part belongs to the DTC113EE series of digital transistors manufactured by onsemi. It is functionally related to other parts in the same datasheet such as MUN2230, MMUN2230L, and MUN5230, which share similar internal architectures but may differ in package style or resistor values. The DTC113EET1G specifically utilizes the SC-75 case outline.
Replacement Considerations
Direct replacements within the same family include DTC113EM3T5G, which uses a SOT-723 package. For automotive applications requiring PPAP capability, consider variants with the S or NSV prefix. Verify pinout compatibility and electrical parameters before substituting with other BRT devices.
