DTC113EM3T5G

DTC113EM3T5G

  • Description:TRANS PREBIAS NPN 50V SOT723
  • Series:-

SKU:614d0aa038eb Category: Brand:

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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V SOT723
  • Series:-
  • Mfr:onsemi
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):1 kOhms
  • Resistor - Emitter Base (R2):1 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:3 @ 5mA, 10V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 5mA, 10mA
  • Current - Collector Cutoff (Max):500nA
  • Frequency - Transition:-
  • Power - Max:260 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-723
  • Supplier Device Package:SOT-723

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DTC113EM3T5G

Overview

The DTC113EM3T5G is an NPN Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network consisting of two resistors: a series base resistor (R1) and a base-emitter resistor (R2). Both resistors are specified at 1 kΩ. The device features a maximum collector-emitter voltage (VCEO) of 50 Vdc and a continuous collector current (IC) of 100 mAdc. It operates within a junction temperature range of -55°C to +150°C and has a total power dissipation (PD) of 260 mW at 25°C ambient temperature. The component is housed in a SOT-723 surface-mount package.

Feature Summary

  • Integrates a single NPN transistor with a monolithic bias network comprising a series base resistor and a base-emitter resistor to replace discrete components.
  • Designed to simplify circuit design by eliminating the need for external input resistors in inverter configurations.
  • Reduces overall system cost and board space requirements by consolidating multiple components into a single device.

Applications

  • Inverter circuits requiring integrated biasing without external input resistors
  • General-purpose switching applications replacing discrete BJT and resistor networks
  • Space-constrained designs utilizing the compact SOT-723 package

Procurement Notes

Verify the specific ordering suffix 'T5G' corresponds to the SOT-723 package and tape-and-reel shipping configuration containing 8,000 units per reel. Confirm that the 'M3' designation indicates a lead-free, halogen-free, and RoHS-compliant manufacturing process as defined by onsemi standards. Ensure compatibility with the required PCB footprint dimensions for the SC-70/SOT-723 case outline before finalizing procurement orders.

Selection Notes

Select this component when a compact NPN solution with integrated 1 kΩ base and emitter resistors is required. The 50 V collector-emitter rating and 100 mA continuous current capability suit low-voltage switching tasks. Consider the SOT-723 package for minimal board area consumption compared to larger packages like SOT-23 or SC-75. Validate thermal performance against the derating curve if operating above 25°C ambient temperature.

Part Context

This part belongs to the DTC113E digital transistor family, which includes variants such as DTC113EE and MUN2230. These devices share the same internal circuit topology but differ in packaging options including SC-59, SOT-23, SC-70, SC-75, and SOT-1123. The DTC113EM3T5G specifically utilizes the SOT-723 form factor, offering a smaller footprint than the standard SOT-23 while maintaining similar electrical characteristics.

Replacement Considerations

Direct replacements include other DTC113E family members with different packages, such as DTC113EE (SC-75) or MUN2230 (SOT-23), provided the PCB layout accommodates the alternative footprint. Cross-reference with equivalent BRTs from other manufacturers ensuring matching R1/R2 values of 1 kΩ and compatible VCEO/IC ratings.

DTC113EM3T5GDTC113EM3T5G

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