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The DTC113ZE3TL is an NPN digital transistor from the ROHM DTC113Z series, housed in a SOT-416 (EMT3) surface-mount package. It integrates bias resistors R1 and R2 with a single BJT to simplify circuit design. Key electrical parameters include a supply voltage of 50V, a maximum collector current of 100mA, and a power dissipation of 150mW at 25°C. The typical input resistance R1 is 1.0kΩ, while R2 is 10kΩ, yielding a resistance ratio of 10. The device features a minimum DC current gain of 33 and a transition frequency of 250MHz. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packaging format and reel specifications. Confirm RoHS compliance status through the latest datasheet revision. Ensure storage conditions adhere to humidity barrier bag requirements to maintain solderability before use.
Select this component for applications requiring a compact NPN digital transistor with integrated biasing. Verify that the 50V supply voltage and 100mA collector current ratings meet the system requirements. Consider the complementary DTA113Z series if a PNP configuration is needed for the same circuit topology.
This part belongs to the DTC113Z series of Bias Resistor Built-in Transistors manufactured by ROHM Semiconductor. The series offers various package options including SOT-723, SOT-416FL, SOT-323FL, and SOT-346. The DTC113ZE3 variant specifically utilizes the SOT-416 package code EMT3.
Check for direct substitutes within the DTC113Z series such as DTC113ZEB or DTC113ZM if package compatibility allows. Verify pinout and electrical characteristics match before substitution.
The built-in resistors R1 and R2 allow the configuration of an inverter circuit without connecting external input resistors.
The typical resistance ratio of R2 to R1 is 10.
The maximum junction temperature is 150°C.