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The DTC113ZEBTL is a pre-biased NPN digital transistor manufactured by ROHM Semiconductor. It integrates biasing resistors to simplify circuit design. Key electrical parameters include a collector-emitter breakdown voltage (VCEO) of 50 V and a maximum continuous collector current (IC) of 100 mA. The device features an input resistance (R1) of 1 kΩ and an emitter-base resistance (R2) of 10 kΩ. Power dissipation is rated at 0.15 W. The unit operates within a temperature range of -55 °C to +150 °C and utilizes the SOT-416 surface-mount package.
Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status and lead times directly with suppliers. Ensure storage conditions adhere to moisture sensitivity level requirements. Validate package markings against official datasheet specifications prior to assembly.
Select this component for designs requiring compact NPN switching with integrated biasing. Verify that the 100 mA collector current meets load requirements. Ensure the 50 V voltage rating exceeds peak circuit voltages. Consider the SOT-416 footprint constraints during PCB layout planning.
This part belongs to ROHM's DTC series of resistor-equipped bipolar transistors. These devices combine a single NPN transistor with internal bias networks. The series targets space-constrained applications where board area reduction is critical. The DTC113 variant specifically uses a 1kΩ/10kΩ resistor ratio.
Cross-reference with other DTC113 variants such as DTC113ZE or DTC113ZCT116. Verify pinout compatibility and electrical parameter alignment before substitution. Check package differences between SOT-416 and SOT-23 formats.