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The DTC114E is an NPN Bias Resistor Transistor (BRT) from onsemi, integrating a single transistor with a monolithic bias network. It features built-in resistors: R1 = 10 kΩ and R2 = 10 kΩ. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current (IC) of 100 mA, and a power dissipation (PD) of 260 mW. The device operates within a temperature range of -55°C to +150°C and is housed in the SOT-723 package.
Verify the specific suffix (e.g., T5G, EET1G) against the official datasheet to confirm package type and automotive qualification status. Ensure the ordering part number matches the required reel or cut tape quantity. Confirm RoHS compliance and halogen-free status as specified in the manufacturer's documentation for the exact variant.
Select this component when replacing discrete transistors with external bias networks to save PCB area. Verify that the 10 kΩ input resistance aligns with the driving source impedance. Check that the 50 V rating exceeds the maximum circuit voltage. Consider the SOT-723 package dimensions for layout compatibility.
This component belongs to the DTC114 series of digital transistors designed for surface mount applications. It serves as a direct replacement for discrete NPN transistors combined with two bias resistors. The series is engineered to streamline design processes while maintaining reliability in standard electronic equipment.
DTC114EU3HZG is a recommended alternative with identical pinout and package (SOT-323/UMT3), offering AEC-Q101 automotive qualification. Verify thermal performance differences between SOT-723 and SOT-323 packages if power dissipation limits are critical.