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The DTC114ECAT116 is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-23-3 (SST3) surface-mount package. It integrates bias resistors with typical values of R1 = 10 kOhms and R2 = 10 kOhms, maintaining a ratio of 1. Key electrical parameters include a collector-emitter breakdown voltage (VCEO) of 50 V, a continuous collector current (Ic) of 50 mA to 100 mA, and a transition frequency (fT) of 250 MHz. The device exhibits a minimum DC current gain (hFE) of 30 at 5 mA/5 V, a maximum power dissipation of 200 mW to 350 mW, and an emitter-base voltage (VEBO) of 3 V. It operates within a temperature range up to +150°C.
Verify the specific suffix AT116 against the official ROHM datasheet to confirm packaging details such as reel size or tape specifications. Ensure the component meets RoHS compliance requirements for the target assembly process. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and traceability before procurement.
Select this component when a compact NPN digital transistor with 10 kOhm bias resistors is required. Verify that the 50 V collector-emitter voltage and 50 mA to 100 mA current ratings align with the load requirements. Confirm compatibility with SOT-23-3 footprint constraints and ensure the operating temperature range supports the intended thermal environment.
This part belongs to the DTC114ECA series of pre-biased transistors from ROHM Semiconductor. It serves as a surface-mount solution for replacing discrete resistor-transistor combinations. The DTC114ECAT116 is functionally related to other variants in the DTx family, differing primarily in bias resistance values and packaging configurations.
Direct substitutes may include DTC114ECA or DTC114WE, though package differences exist. Verify pinout compatibility and electrical parameter equivalence, particularly regarding hFE and VCEO ratings, before implementing any alternative component in the design.