DTC114EE3TL

DTC114EE3TL

$0.23
  • Description:TRANS PREBIAS NPN 50V 0.1A EMT3
  • Series:DTC123E

SKU:63b81bff6e05 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A EMT3
  • Series:DTC123E
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R1 and R2
  • Transistor Type:NPN - Pre-Biased + Diode
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):2.2 kOhms
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:33 @ 10mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • Frequency - Transition:250 MHz
  • Power - Max:150 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:EMT3

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DTC114EE3TL

Overview

The DTC114EE3TL is an NPN digital transistor from the ROHM DTC114E series, housed in a SOT-416 (EMT3) surface-mount package. It integrates biasing resistors with R1 and R2 both at 10 kΩ. The device supports a maximum collector current of 100 mA and a supply voltage of 50 V. Key electrical parameters include a DC current gain (GI) minimum of 30 at 5 mA output, a transition frequency of 250 MHz, and a power dissipation rating of 150 mW. The component operates within a junction temperature range up to 150 °C.

Feature Summary

  • Built-in biasing resistors eliminate the need for external input components, simplifying circuit design.
  • Enables direct configuration of inverter circuits by setting only on/off conditions.
  • Provides high-speed switching capabilities suitable for interface and driver applications.

Applications

  • Inverter circuits
  • Interface logic
  • Driver stages

Procurement Notes

Verify the specific suffix '3' corresponds to the SOT-416 package and standard taping specifications before ordering. Confirm RoHS compliance status and ensure the application environment remains within the specified operating temperature limits. Validate that the 100 mA collector current requirement aligns with the system's peak load demands.

Selection Notes

Select this component when a single NPN digital transistor with equal base and emitter resistors is required. Compare against the complementary PNP DTA114E series if a negative logic inversion is needed. Ensure the 50 V breakdown voltage meets the circuit's supply requirements and verify that the 150 mW power dissipation is sufficient for the thermal management strategy.

Part Context

This part belongs to the DTC114E series of Bias Resistor Built-in Transistors (BRT). It is designed as a replacement for discrete resistor-transistor networks, reducing board space and assembly complexity. The series includes various packages such as SOT-723 and SOT-323, with the EE3 variant specifically utilizing the compact SOT-416 form factor.

Replacement Considerations

Direct functional substitutes include other NPN BRTs with 10kΩ/10kΩ internal resistors and similar voltage/current ratings. Verify pinout compatibility and package dimensions when cross-referencing with competitors' offerings to ensure mechanical fit.

DTC114EE3TLDTC114EE3TL
$0.23
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