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The DTC114EE3TL is an NPN digital transistor from the ROHM DTC114E series, housed in a SOT-416 (EMT3) surface-mount package. It integrates biasing resistors with R1 and R2 both at 10 kΩ. The device supports a maximum collector current of 100 mA and a supply voltage of 50 V. Key electrical parameters include a DC current gain (GI) minimum of 30 at 5 mA output, a transition frequency of 250 MHz, and a power dissipation rating of 150 mW. The component operates within a junction temperature range up to 150 °C.
Verify the specific suffix '3' corresponds to the SOT-416 package and standard taping specifications before ordering. Confirm RoHS compliance status and ensure the application environment remains within the specified operating temperature limits. Validate that the 100 mA collector current requirement aligns with the system's peak load demands.
Select this component when a single NPN digital transistor with equal base and emitter resistors is required. Compare against the complementary PNP DTA114E series if a negative logic inversion is needed. Ensure the 50 V breakdown voltage meets the circuit's supply requirements and verify that the 150 mW power dissipation is sufficient for the thermal management strategy.
This part belongs to the DTC114E series of Bias Resistor Built-in Transistors (BRT). It is designed as a replacement for discrete resistor-transistor networks, reducing board space and assembly complexity. The series includes various packages such as SOT-723 and SOT-323, with the EE3 variant specifically utilizing the compact SOT-416 form factor.
Direct functional substitutes include other NPN BRTs with 10kΩ/10kΩ internal resistors and similar voltage/current ratings. Verify pinout compatibility and package dimensions when cross-referencing with competitors' offerings to ensure mechanical fit.