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The DTC114EEBTL is an NPN digital transistor manufactured by ROHM Semiconductor, featuring built-in biasing resistors to simplify circuit design. It operates with a collector-emitter voltage of 50 V and a continuous collector current of 50 mA. The device includes a base resistor (R1) of 10 kOhms and an emitter-base resistor (R2) of 10 kOhms, resulting in a typical resistance ratio of 1. Key electrical characteristics include a DC current gain (hFE) of at least 30 at 5 mA and 5 V, a transition frequency of 250 MHz, and a maximum power dissipation of 150 mW. It is housed in the EMT3F (SOT-416FL) surface-mount package.
Verify the specific suffix BTL corresponds to the EMT3F (SOT-416FL) tape-and-reel packaging configuration. Confirm RoHS compliance status and ensure the component meets automotive or industrial reliability requirements if applicable, as standard grades may differ from qualified variants.
Select this component when a compact NPN digital transistor with equal base and emitter resistors is required. Ensure the 50 mA collector current rating and 50 V breakdown voltage align with the target circuit's load and supply constraints. Verify that the SOT-416FL footprint matches the PCB layout design.
This part belongs to the DTC114 series of pre-biased transistors from ROHM. The 'EE' designation indicates specific resistor values (R1=10k, R2=10k), while 'BTL' specifies the EMT3F package and taping format. It serves as a direct replacement for other single NPN digital transistors with identical electrical parameters and pinout configurations.
Compatible substitutes include DTC114EETL and DTC114EUBTL, provided they match the required package type and electrical ratings. Verify that alternative parts maintain the same 10 kOhm resistor values and NPN polarity to ensure circuit compatibility without redesign.