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Product Detailed Parameters
- Description：TRANS PREBIAS NPN 50V 0.1A SC75
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Resistors Included：R1 and R2
- Transistor Type：NPN - Pre-Biased
- Current - Collector (Ic) (Max)：100 mA
- Voltage - Collector Emitter Breakdown (Max)：50 V
- Resistor - Base (R1)：10 kOhms
- Resistor - Emitter Base (R2)：10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce：35 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic：250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max)：500nA
- Frequency - Transition：-
- Power - Max：200 mW
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：SC-75, SOT-416
- Supplier Device Package：SC-75, SOT-416
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Overview
The DTC114EET1G is an NPN Bias Resistor Transistor (BRT) from onsemi, designed to replace a single transistor and its external bias network. It integrates a monolithic bias resistor network consisting of a series base resistor (R1) and a base-emitter resistor (R2), both specified at 10 kΩ. The device operates with a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA. It features a minimum DC current gain (hFE) of 80 and a power dissipation rating of 200 mW. The component is housed in a compact SC-75 (SOT-416) surface-mount package and is qualified under AEC-Q101 standards for automotive applications.
Feature Summary
- Integrates a monolithic bias network with two resistors into a single NPN transistor device
- Reduces printed circuit board space and component count by eliminating external bias resistors
- Qualified for automotive applications under AEC-Q101 standards with PPAP capability
Applications
- Inverter circuits
- Interface logic drivers
- General-purpose switching applications requiring simplified bias networks
Procurement Notes
Verify the specific ordering suffix and manufacturing site code against the latest official datasheet revision to ensure compliance with required quality standards. Confirm that the AEC-Q101 qualification status aligns with the target application's automotive or industrial requirements before finalizing procurement specifications.
Selection Notes
Select this component when a design requires an NPN switching solution with integrated biasing to minimize board area. Ensure the required base resistance values match the fixed 10 kΩ internal configuration. Verify that the 50 V collector-emitter voltage rating and 100 mA current capacity meet the circuit's operational limits and thermal dissipation constraints within the SC-75 package.
Part Context
This part belongs to the DTC114EE series of digital transistors manufactured by onsemi. These devices are engineered to simplify circuit design by combining a transistor with a built-in resistor network. The series is widely used in consumer electronics and industrial equipment where space efficiency and reduced assembly complexity are prioritized over adjustable bias parameters.
Replacement Considerations
Direct pin-compatible substitutes include other NPN BRTs with identical 10 kΩ/10 kΩ resistor ratios and 50 V ratings, such as the DTC114EM3T5G or equivalent parts from other manufacturers offering the SC-75/SOT-416 package with matching electrical characteristics.
