DTC114EM3T5G

Overview

The DTC114EM3T5G is a single NPN Bias Resistor Transistor (BRT) manufactured by onsemi. It integrates a monolithic bias network consisting of a series base resistor and a base-emitter resistor to simplify circuit design. The device features a typical input resistance of 10 kOhms with a resistor ratio of 1. Key electrical parameters include a maximum collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation of 260 mW. The DC current gain (hFE) ranges from a minimum of 35 to 60. It operates within a temperature range of -55°C to +150°C and is housed in an SOT-723-3 surface-mount package.

Feature Summary

• Integrates a single NPN transistor with a monolithic bias network comprising two resistors to replace discrete components.
• Designed to reduce board space and component count while simplifying circuit design processes.
• Constructed using lead-free, halogen-free, and brominated flame retardant-free materials compliant with RoHS standards.

Applications

• General-purpose switching applications requiring simplified biasing networks.
• Interface circuits for logic families needing level shifting or buffering.
• Driver stages for low-power loads where board space optimization is critical.

Procurement Notes

Verify the specific ordering suffix against official manufacturer documentation to confirm package type and tape-and-reel specifications. Ensure that the procurement channel provides valid traceability data for the DTC114EM3T5G part number. Confirm compliance with relevant environmental directives such as RoHS through official certificates provided by onsemi before finalizing acquisition.

Selection Notes

Select this component when a single NPN BRT with a 10 kOhm base resistor is required. Compare the 50 V voltage rating and 100 mA current capacity against circuit demands. Consider the SOT-723-3 package dimensions for PCB layout constraints. Evaluate thermal performance based on the 260 mW power dissipation limit under expected operating conditions.

Part Context

This component belongs to the DTC114EM3 series of digital transistors produced by onsemi. It shares functional similarities with other BRTs in the lineup but is distinguished by its specific NPN polarity and 10 kOhm internal resistance configuration. The series is designed for applications prioritizing miniaturization and reduced bill-of-materials complexity in electronic assemblies.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify compatibility with alternative BRTs by matching NPN polarity, VCEO ratings, and internal resistance values. Consult official cross-reference guides from onsemi or authorized distributors for validated replacements.