DTC114ESATP

Overview

The DTC114ESATP is an NPN digital transistor from the ROHM Semiconductor DTC114ESA series, housed in a SMT3 (SC-59) surface-mount package. It integrates bias resistors with R1 and R2 values of 10 kΩ each, providing a resistance ratio of 1. The device supports a supply voltage of 50V and a continuous collector current of 100 mA, with a power dissipation rating of 150 mW at 25°C. Key electrical characteristics include a DC current gain (hFE) minimum of 30 at 5 mA/5 V and a transition frequency of 250 MHz. It operates within a junction temperature range of -55°C to +150°C.

Feature Summary

• Built-in thin-film bias resistors enable direct inverter circuit configuration without external input components.
• Resistor isolation allows for negative input biasing while minimizing parasitic effects.
• Simplified design process by requiring only on/off state settings for operation.

Applications

• Inverter circuits
• Interface logic applications
• Driver stages

Procurement Notes

Verify the specific suffix 'TP' against official documentation to confirm tape-and-reel packaging details. Confirm RoHS compliance status and ensure the component meets environmental requirements for the intended deployment environment before finalizing orders.

Selection Notes

Select this component when a compact SC-59 footprint is required for NPN switching applications. Ensure the 150 mW power dissipation limit accommodates thermal constraints. Verify that the 10 kΩ built-in resistor values align with the driving source impedance and required input thresholds.

Part Context

This part belongs to the DTC114E family, which includes variants like DTC114EE and DTC114EM. While sharing similar electrical performance, the DTC114ESA differs primarily in its physical SMT3 package dimensions and pinout arrangement compared to other series members.

Replacement Considerations

DTC114ESA is a standard replacement for DTC114ESA. Cross-package equivalents require verifying pin compatibility and thermal ratings.