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The DTC114EUAT106 is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-323-3 surface-mount package. It features a built-in bias resistor network with a typical input resistance of 100 kOhms and a resistor ratio of 1. The device supports a collector-emitter voltage (VCEO) of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain (hFE) of 82 at 5 mA and 5 V, a maximum operating frequency of 250 MHz, and a power dissipation rating of 200 mW. The emitter-base voltage (VEBO) is specified at 3 V, with a saturation voltage of 100 mV.
Verify the component status before procurement as this specific part number is marked as Not Recommended for New Designs (NRND). Confirm availability through authorized distributors or surplus channels, as standard factory production may be discontinued. Ensure the ordering suffix matches the required tape and reel specifications if applicable.
Select this component when a high-input-resistance NPN digital transistor is required for space-constrained designs using the SOT-323 package. Compare against the recommended replacement DTC114EU3HZGT106 if automotive qualification or updated supply chain stability is necessary. Ensure the 100 kOhm input resistance aligns with the driving source impedance requirements.
This component belongs to the DTC114 series of Bias Resistor Built-in Transistors (BRBTs) from ROHM Semiconductor. It shares the same physical footprint and pinout configuration as other variants in the UMT3/SOT-323 family, allowing for potential board-level substitutions among different resistor ratios within the same package type.
The DTC114EU3HZGT106 is listed as a recommended replacement with the same pinout and package. Verify that the AEC-Q101 automotive qualification of the replacement meets project requirements if applicable.