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The DTC114GU3HZGT106 is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in a SOT-323 (UMT3) surface-mount package. It integrates bias resistors with a typical base resistance of 10 kOhms and an emitter resistance of 10 kOhms. The device supports a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. Key electrical parameters include a minimum DC current gain of 30 at -5 mA and -5 V, a maximum operating frequency of 250 MHz, and power dissipation of 200 mW. It meets AEC-Q101 automotive standards.
Verify the specific suffix GT106 against the official datasheet to confirm the tape-and-reel packaging quantity of 3000 units. Ensure the component matches the required polarity and resistance values for the target application before finalizing orders.
Select this component when a compact NPN switch with integrated biasing is required for automotive or industrial environments. Compare the 10k/10k resistor ratio against other models like DTC114YU3HZGT106 if different input impedance characteristics are needed for the driving source.
This part belongs to the DTC114 series of pre-biased transistors from ROHM. It serves as the PNP complement to the DTA114GU3HZG series within the same UMT3 footprint family, offering matched performance characteristics for push-pull configurations.
Direct functional substitutes within the same package and specification range include DTC114EU3HZGT106 and DTC114WU3HZGT106. Verify that the alternative part maintains the 10k/10k resistor configuration and AEC-Q101 certification.