DTC114GU3T106

DTC114GU3T106

$0.15
  • Description:TRANS PREBIAS NPN 50V 0.1A UMT3
  • Series:-

SKU:54018cbd4929 Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 0.1A UMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Resistors Included:R2 Only
  • Transistor Type:NPN - Pre-Biased
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Resistor - Base (R1):-
  • Resistor - Emitter Base (R2):10 kOhms
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max):500nA (ICBO)
  • Frequency - Transition:250 MHz
  • Power - Max:200 mW
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:UMT3

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DTC114GU3T106

Overview

The DTC114GU3T106 is a single NPN digital transistor manufactured by ROHM Semiconductor, housed in an SOT-323-3 surface-mount package. It features a built-in bias resistor network with a typical input resistance of 10 kOhms. Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation rating of 200 mW. The device supports a maximum operating frequency of 250 MHz and maintains a minimum DC current gain (hFE) of 30 at 5 mA and 5 V. It operates within a temperature range up to +150°C.

Feature Summary

  • Integrates internal bias resistors to eliminate external components for basic switching circuits
  • Provides high-speed switching capability suitable for frequencies up to 250 MHz
  • Offers compact surface-mount packaging for space-constrained designs

Applications

  • General-purpose logic level shifting and signal inversion
  • Driver circuits for small-signal loads and relays
  • Interface circuits between microcontrollers and peripheral devices

Procurement Notes

Verify the specific suffix T106 to confirm the tape-and-reel packaging quantity of 3000 units per reel. Ensure compatibility with standard SMT reflow profiles and check for RoHS compliance documentation corresponding to the manufacturing date code. Confirm that the SOT-323 footprint matches the target PCB layout requirements before finalizing procurement orders.

Selection Notes

Select this component when a single NPN switch with integrated base biasing is required. The 10 kOhm input resistance is suitable for direct interfacing with standard logic outputs. Consider the 50 V collector-emitter voltage limit and 100 mA current capacity against load requirements. The SOT-323 package is appropriate for applications prioritizing minimal board area consumption.

Part Context

This part belongs to the DTC114 series of Bias Resistor Built-in Transistors (BRBTs). It shares the same functional architecture as other variants in the family but differs in internal resistor values and package types. The GU3 designation specifically identifies the SOT-323 package configuration with the associated thermal and electrical characteristics defined by ROHM for this form factor.

Replacement Considerations

Direct substitutes may include other NPN digital transistors with similar 10 kOhm input resistance and SOT-323 packaging, such as parts from ON Semiconductor or STMicroelectronics. Verify pinout compatibility and ensure equivalent VCEO and IC ratings are met. Cross-reference datasheets for hFE and switching speed differences to guarantee circuit performance stability.

DTC114GU3T106DTC114GU3T106
$0.15
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