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The DTC114GUAT106 is a single NPN digital transistor manufactured by Rohm Semiconductor, designed for surface-mount applications in the UMT3 (SC-70/SOT-323) package. It integrates an internal base resistor (R1) of 47 kOhms to simplify circuit design. Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 50 V and a continuous collector current (Ic) of 100 mA. The device features a transition frequency (fT) of 250 MHz and a maximum power dissipation (Pd) of 200 mW. DC current gain (hFE) is specified at a minimum of 68 at Ic=5mA, Vce=5V, with a maximum saturation voltage of 300 mV at Ib=500µA, Ic=10mA.
Verify the complete part number including the suffix AT106 to ensure correct packaging and tape-and-reel configuration. Confirm RoHS compliance status and moisture sensitivity level requirements against specific manufacturing process constraints before finalizing procurement orders.
Select this component when a compact NPN switch with integrated biasing is required. Ensure the 50V voltage rating and 100mA current limit exceed the application's peak operational demands. Verify that the 47k Ohm internal base resistor aligns with the driving source's current capabilities.
This part belongs to the DTC1xx series of pre-biased transistors from Rohm. The '1' in the model number indicates the inclusion of only the base resistor (R1). It serves as a direct replacement for discrete BJT configurations requiring simplified bias networks in consumer and industrial electronics.
Direct substitutes within the same family include DTC124GUAT106 (includes R2) and DTC144GUAT106 (includes R1 and R2). Cross-manufacturer equivalents must match the UMT3 package, 50V rating, and 47k Ohm base resistance specification.