DTC114T

DTC114T

$0.03
  • Description:TRANS PREBIAS NPN 50V 100MA
  • Series:*

SKU:dd8aa7a9885c Category: Brand:

  
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Product Detailed Parameters

  • Description:TRANS PREBIAS NPN 50V 100MA
  • Series:*
  • Mfr:onsemi
  • Package:Bulk
  • Resistors Included:-
  • Transistor Type:-
  • Current - Collector (Ic) (Max):-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Resistor - Base (R1):-
  • Resistor - Emitter Base (R2):-
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Vce Saturation (Max) @ Ib, Ic:-
  • Current - Collector Cutoff (Max):-
  • Frequency - Transition:-
  • Power - Max:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-

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DTC114T

Overview

The DTC114T is a single NPN digital transistor manufactured by onsemi, designed to replace discrete transistors and external bias resistors. It integrates a monolithic bias network consisting of a series base resistor (R1) and a base-emitter resistor (R2). Key electrical parameters include a collector-emitter voltage (VCEO) of 50 V, a continuous collector current of 100 mA, and a power dissipation of 260 mW. The typical input resistance R1 is 10 kOhms. The device operates within a temperature range of -55°C to +150°C and is housed in an SOT-23-3 surface-mount package.

Feature Summary

  • Integrates a monolithic bias network with series base and base-emitter resistors to eliminate external components.
  • Enables simple inverter circuit configuration by requiring only on/off signal inputs without external biasing resistors.
  • Provides space-saving surface-mount packaging suitable for low-power applications.

Applications

  • Inverter circuits
  • Driver circuits
  • Switching applications

Procurement Notes

Verify the specific suffix against official datasheets to confirm exact internal resistance values and package variations. Confirm RoHS compliance status and automotive qualification requirements if applicable to the design. Ensure the ordering code matches the required tape-and-reel or cut-tape format for manufacturing integration.

Selection Notes

Select this component when a compact NPN switching solution with integrated biasing is required. Compare the 10 kOhm base resistance against other series variants like DTC114TM or DTC114TA if different input impedance characteristics are needed. Verify that the 50 V breakdown voltage and 100 mA current rating meet the load requirements.

Part Context

This part belongs to the DTC114 series of NPN silicon digital transistors from onsemi. These devices are engineered to simplify circuit design by combining a transistor with its necessary biasing resistors into a single surface-mount package, reducing board space and assembly costs compared to discrete solutions.

Replacement Considerations

Compatible substitutes include DTC114TM, DTC114TA, and DTC114TE3HZG. Verify pinout compatibility and ensure the replacement variant meets the specific resistance tolerance and thermal performance requirements of the original design.

FAQ

What is the function of the internal resistors in the DTC114T?

The internal resistors form a bias network consisting of a series base resistor and a base-emitter resistor, allowing the transistor to be driven directly by logic signals without external components.

What is the maximum collector-emitter voltage for this device?

The maximum collector-emitter voltage (VCEO) is 50 V.

Which package type does the standard DTC114T use?

The standard DTC114T is available in the SOT-23-3 surface-mount package.

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